首頁(yè) >TPH6R003NLLQ>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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MOSFETsSiliconN-channelMOS Applications ?SwitchingVoltageRegulators ?DC-DCConverters Features (1)High-speedswitching (2)Smallgatecharge:QSW=4.3nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=6.8mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (5)Enhancementm | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS Applications ?SwitchingVoltageRegulators ?DC-DCConverters Features (1)High-speedswitching (2)Smallgatecharge:QSW=4.3nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=6.8mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (5)Enhancementm | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER |
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