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TRSL-8110BG

3.3V/1310nm/4.25GbpsSFFLCSINGLE-MODETRANSCEIVER

OPTOWAY

Optoway Technology Inc

TRSL-8110BWG

3.3V/1310nm/4.25GbpsDigitalDiagnosticLCSFPSINGLE-MODETRANSCEIVER

OPTOWAY

Optoway Technology Inc

TRSL-8110G

3.3V/1310nm/4.25GbpsSFFLCSINGLE-MODETRANSCEIVER

OPTOWAY

Optoway Technology Inc

TRSL-8110WG

3.3V/1310nm/4.25GbpsDigitalDiagnosticLCSFPSINGLE-MODETRANSCEIVER

OPTOWAY

Optoway Technology Inc

UPC8110GR

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES ?Directmodulationrange:800MHzto1GHz ?Supplyvoltagerange:VCC=2.7to3.6V ?Lowoperationcurrent:ICC=24mAtypical@VCC=3V ?Lowphasedifferenceduetodigitalphaseshifterisadopted. ?20pinSSOPsuitableforhighdensitysurfacemounting. ?Lowcurrent

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC8110GR

1GHzQUADRATUREMODULATOR

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8110GR

1GHzQUADRATUREMODULATOR

DESCRIPTION TheμPC8110GRisasilliconmonolithicintegratedcircuitdesignedas1GHzdirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorhousedina20pinplasticSSOPthateasytoinstallandcontributestominiaturizingthesystem. Thedevicehaspowersave

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8110GR

SingleChipTransceiverSiliconMMICforPHS

DESCRIPTION TheμPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8110GR

1GHzDIRECTQUADRATUREMODULATORFORDIGITALMOBILECOMMUNICATION

DESCRIPTION TheμPC8110GRisasilliconmonolithicintegratedcircuitdesignedas1GHzdirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorhousedina20pinplasticSSOPthateasytoinstallandcontributestominiaturizingthesystem. Thedevicehaspowersave

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPC8110GR

UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

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更多TLE8110ED供應(yīng)商 更新時(shí)間2025-6-22 11:22:00