TLE4922-XAN-F

速度磁傳感器; ·Twist independent mounting (TIM) “enables one sensor fits all”\n ·Protected against harsh environment due to\n · Short-circuit at the output\n · Over temperature shutdown at the output and\n · Reverse voltage protection \n \n ·Supreme performance due to adaptive symmetrical hysteresis / threshold\n · Independent of back bias magnet polarity due to ±440mT full scale range\n ·Enhanced EMC & ESD robustness - ESD : ±4kV HBM\n ·Wide operating temperature range - Tjunction: -40 °C - 155 °C\n ·True zero speed up to 8kHz signal frequency\n ·Enabling Low Power Application: Idd = 5mA at Vdd = 9V\n ·Large operating voltage range of 4.5V up to 16V\n ·Small thin package (PG-SSO-4-1)\n ·Robustness against wheel run outs enables to sense broad range of wheels\n;

The TLE4922 is an active mono cell Hall sensor ideally suited for detecting the motion and position of ferromagnetic and permanent magnet structures. An additional self-calibration module has been implemented to achieve optimum accuracy during normal running operation. The -XAN type features an extended test and a qualification profile.

TLE4922-XAN-F

絲?。?a target="_blank" title="Marking" href="/22baa1/marking.html">22BAA1；Package：PG-SSO-4-1；The TLE4922 is an active mono cell Hall sensor suited to detect motion and position of ferromagnetic and permanent magnet structures

4922R

SurfaceMountHighCurrentPowerInductors

ACE4922

DualN-ChannelEnhancementModeMOSFET

ACE4922B

DualN-ChannelEnhancementModeFieldEffectTransistor

ACE4922BEM

DualN-ChannelEnhancementModeFieldEffectTransistor

Description TheACE4922BistheDualN-Channelenhancementmodepowerfieldeffecttransistorsareproducedusinghighcelldensity,DMOStrenchtechnology.Thishighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance. Thesedevices

AM4922N

DualN-ChannelMOSFETusesadvancedtrenchtechnology

AM4922N

N-Channel20-V(D-S)MOSFET

AO4922

AsymmetricDualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4922usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinDC-DCconverters.AmonolithicallyintegratedSchottkydiodeinparallelwiththe

AO4922

AsymmetricDualN-ChannelMOSFET