TE28F160S3-100中文資料英特爾數(shù)據(jù)手冊(cè)PDF規(guī)格書

INTRODUCTION

This datasheet contains 16- and 32-Mbit WordWide FlashFileTM memory (28F160S3 and 28F320S3) specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications for extended temperature product offerings.

■ Two 32-Byte Write Buffers

- 2.7 μs per Byte Effective Programming Time

■ Low Voltage Operation

- 2.7V or 3.3V VCC

- 2.7V, 3.3V or 5V VPP

■ 100 ns Read Access Time (16 Mbit) 110 ns Read Access Time (32 Mbit)

■ High-Density Symmetrically-Blocked Architecture

- 32 64-Kbyte Erase Blocks (16 Mbit)

- 64 64-Kbyte Erase Blocks (32 Mbit)

■ System Performance Enhancements

- STS Status Output

■ Industry-Standard Packaging

- μBGA* package, SSOP, and TSOP (16 Mbit)

- μBGA* package and SSOP (32 Mbit)

■ Cross-Compatible Command Support

- Intel Standard Command Set

- Common Flash Interface (CFI)

- Scaleable Command Set (SCS)

■ 100,000 Block Erase Cycles

■ Enhanced Data Protection Features

- Absolute Protection with VPP = GND

- Flexible Block Locking

- Block Erase/Program Lockout during Power Transitions

■ Configurable x8 or x16 I/O

■ Automation Suspend Options

- Program Suspend to Read

- Block Erase Suspend to Program

- Block Erase Suspend to Read

■ ETOX? V Nonvolatile Flash Technology