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ISL70024SEH

200V,7.5AEnhancementModeGaNPowerTransistor

Features ?VerylowrDS(ON)45mΩ(typical) ?Ultralowtotalgatecharge2.5nC(typical) ?SEEhardness(seeSEEreportfordetails) ?SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV?cm2/mg ?ISL70024SEHradiationacceptance(seeTIDreport) ?Highdoserate(50-300rad(Si)/s):100krad(Si) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL70024SEHL/PROTO

200V,7.5AEnhancementModeGaNPowerTransistor

Features ?VerylowrDS(ON)45mΩ(typical) ?Ultralowtotalgatecharge2.5nC(typical) ?SEEhardness(seeSEEreportfordetails) ?SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV?cm2/mg ?ISL70024SEHradiationacceptance(seeTIDreport) ?Highdoserate(50-300rad(Si)/s):100krad(Si) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL70024SEHLSLASHPROTO

200V,7.5AEnhancementModeGaNPowerTransistor

Features ?VerylowrDS(ON)45mΩ(typical) ?Ultralowtotalgatecharge2.5nC(typical) ?SEEhardness(seeSEEreportfordetails) ?SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV?cm2/mg ?ISL70024SEHradiationacceptance(seeTIDreport) ?Highdoserate(50-300rad(Si)/s):100krad(Si) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL70024SEHML

200V,7.5AEnhancementModeGaNPowerTransistor

Features ?VerylowrDS(ON)45mΩ(typical) ?Ultralowtotalgatecharge2.5nC(typical) ?SEEhardness(seeSEEreportfordetails) ?SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV?cm2/mg ?ISL70024SEHradiationacceptance(seeTIDreport) ?Highdoserate(50-300rad(Si)/s):100krad(Si) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL70024SEHMX

200V,7.5AEnhancementModeGaNPowerTransistor

Features ?VerylowrDS(ON)45mΩ(typical) ?Ultralowtotalgatecharge2.5nC(typical) ?SEEhardness(seeSEEreportfordetails) ?SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV?cm2/mg ?ISL70024SEHradiationacceptance(seeTIDreport) ?Highdoserate(50-300rad(Si)/s):100krad(Si) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL70024SEHX/SAMPLE

200V,7.5AEnhancementModeGaNPowerTransistor

Features ?VerylowrDS(ON)45mΩ(typical) ?Ultralowtotalgatecharge2.5nC(typical) ?SEEhardness(seeSEEreportfordetails) ?SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV?cm2/mg ?ISL70024SEHradiationacceptance(seeTIDreport) ?Highdoserate(50-300rad(Si)/s):100krad(Si) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL70024SEHXSLASHSAMPLE

200V,7.5AEnhancementModeGaNPowerTransistor

Features ?VerylowrDS(ON)45mΩ(typical) ?Ultralowtotalgatecharge2.5nC(typical) ?SEEhardness(seeSEEreportfordetails) ?SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV?cm2/mg ?ISL70024SEHradiationacceptance(seeTIDreport) ?Highdoserate(50-300rad(Si)/s):100krad(Si) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

SI-70024

SI-70024

bel

Bel Fuse Inc.

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