STW6N95K5

N-Channel Power MOSFET

DESCRIPTION ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage -VDSS=950V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.25Ω(Max)@VGS=10V APPLICATIONS ·DC-DCconverter ·BatteryChargers ·Highspeedpowerswitch

STW6N95K5

N溝道950 V、1 Ohm典型值、9 A MDmesh K5功率MOSFET，TO-247封裝; ? Industry’s lowest RDS(on) x area \n? Industry’s best FoM (figure of merit) \n? Ultra-low gate charge \n? 100% avalanche tested \n? Zener-protected;

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. \n\n

STW6N95K5

N-channel 950 V, 1 廓 typ., 9 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK

STW6N95K5

N-channel 950 V, 1 廓 typ., 9 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK

6N95K5

N-channel950V,1廓typ.,9AZener-protectedSuperMESH??5PowerMOSFETinDPAK,TO-220FP,TO-220,TO-247andIPAK

STD6N95K5

N-channel950V,1廓typ.,9AZener-protectedSuperMESH??5PowerMOSFETinDPAK,TO-220FP,TO-220,TO-247andIPAK

STD6N95K5

IscN-ChannelMOSFETTransistor

STD6N95K5

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=950V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STF6N95K5

N-channel950V,1廓typ.,9AZener-protectedSuperMESH??5PowerMOSFETinDPAK,TO-220FP,TO-220,TO-247andIPAK

STP6N95K5

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=950V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=1.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.