STW5NK100Z

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STW5NK100Z

N溝道1000V - 3 Ohm - 3.5A - TO-247有齊納管保護的SUPERMESH MOSFET; ? Extremely high dv/dt capability \n? Gate charge minimized \n? 100% avalanche tested \n? Very good manufacturing repeatibility \n? Very low intrinsic capacitances;

The new SuperMESH? series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH? layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH? devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh? products.\n\n

STW5NK100Z

N-channel 1000V - 2.7??- 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH??Power MOSFET

Description ThenewSuperMESH?seriesofPowerMOSFETSistheresultoffurtherdesignimprovementsonSTswell-establishedstripbasedPowerMESH?layout.Inadditiontosignificantlyloweron-resistance,thedeviceofferssuperiordv/dtcapabilitytoensureoptimalperformanceeveninthemostd

STW5NK100Z

N-channel 1000 V, 2.7 廓, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3??Power MOSFET

STW72N60DM2AG

ST
TO-247

ST