STW30N80K5

絲印：30N80K5；Package：TO-247；N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh? K5 Power MOSFET in a TO-247 package

Features ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh?K5 technolog

STW30N80K5

N溝道800 V、0.15 Ohm典型值、24 A MDmesh K5功率MOSFET，TO-247封裝

This very high voltage N-channel Power MOSFET is designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.\n\n; ? Industry’s lowest RDS(on) x area \n? Industry’s best FoM (figure of merit) \n? Ultra-low gate charge \n? 100% avalanche tested \n? Zener-protected;

STB30N80K5

N-channel800V,0.15Ωtyp.,24A,MDmesh?K5PowerMOSFETinaD2PAKpackage

Features Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh?K5 technol

STW34NM60ND

ON
TO-3P

ON

STW34NM60ND

ST
TO-3P

ST