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STU13N60M2

絲?。?a target="_blank" title="Marking" href="/13n60m2/marking.html">13N60M2；Package：IPAK；N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU13N60M2

N溝道600 V、0.35 Ohm典型值、11 A MDmesh M2功率MOSFET，IPAK封裝; ? Extremely low gate charge \n? Excellent output capacitance (Coss) profile \n? 100% avalanche tested \n? Zener-protected;

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.\n\n

STSTMicroelectronics

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STB13N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD13N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF13N60M2

Lowgateinputresistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW13N60M2

N-channel600V,0.35廓typ.,11AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220,IPAKandTO-247packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

技術(shù)參數(shù)

  • Package：

    IPAK

  • Grade：

    Industrial

  • VDSS(V)：

    600

  • RDS(on)_max(@ VGS=10V)(Ω)：

    0.38

  • Drain Current (Dc)_max(A)：

    11

  • PTOT_max(W)：

    110

  • Qg_typ(nC)：

    17

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST/意法半導(dǎo)體
22+
TO-251-3
6006
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價(jià)
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
ST
2447
SMD
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
STM
1809+
TO-251
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
ST
24+
原廠正品
9240
原裝現(xiàn)貨 假一賠百
 詢價(jià)
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
ST
23+
TO251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ST/意法
23+
TO251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ST/意法半導(dǎo)體
24+
TO-251-3
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價(jià)
ST/意法
2022+
5000
只做原裝,價(jià)格優(yōu)惠,長期供貨。
 詢價(jià)
更多STU13N60M2供應(yīng)商 更新時(shí)間2025-7-30 8:31:00

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