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TL3310

TACTSWITCHESSMT-NORMALLYCLOSED

FEATURES&BENEFITS SMTtact Normallyclosedtactswitch APPLICATIONS/MARKETS Telecommunications ConsumerElectronics Audio/visual Medical Testing/instrumentation Computer/servers/peripherals

E-SWITCH

E-switch

TS3310

ATrue150-nAIQ,0.9-3.6VIN,Selectable1.8-5VOUTInstant-OnTMBoostConverter

DESCRIPTION TheTS3310isalowpowerboostswitchingregulatorwithanindustryleadinglowquiescentcurrentof150nA.The150nAistheactualcurrentconsumedfromthebatterywhiletheoutputisinregulation.TheTS3310’sextremelylowpowerinternalcircuitryconsumes90nAonaverage,with

TOUCHSTONE

Touchstone Technologies,Inc

TS3310

User-enabledSecondaryOutputLoadSwitch

DESCRIPTION TheTS3310isalowpowerboostswitchingregulatorwithanindustryleadinglowquiescentcurrentof150nA.The150nAistheactualcurrentconsumedfromthebatterywhiletheoutputisinregulation.TheTS3310’sextremelylowpowerinternalcircuitryconsumes90nAonaverage,with

SILABS

Silicon Laboratories

UT3310

P-CHANNELENHANCEMENTMODEPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

UTR3310

RECTIFIERS

DESCRIPTION Smallsizeandhighsurgecapabilitymakethisseriesofpowerswitchingrectifiersdesirableforpowersupplieswheresize,weightandreliabilityareimportant. FEATURES ●ContinuousRating:to4A ●ControlledAvalanche ●SurgeRating:to100A ●PIV:to600V ●MiniaturePackag

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UTR3310

FASTRECOVERYRECTIFIERS

DIGITRON

Digitron Semiconductors

VBA3310

DualN-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?OptimizedforHigh-SideSynchronous RectifierOperation ?100RgTested ?100UISTested APPLICATIONS ?NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

VBA3310

N-Channel0-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

VBE3310

DualN-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

VDA3310CTA

Lowvoltage,Lowpower,?1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安納森半導體安納森半導體香港有限公司

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