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STGB30H60DFB

絲?。?a target="_blank" title="Marking" href="/gb30h60dfb/marking.html">GB30H60DFB；Package：D2PAK；Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHBseries ofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGB30H60DFB

Trench gate Field-Stop IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=30A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STGB30H60DFB

600 V、30 A高速溝槽柵場截止HB系列IGBT; ? Maximum junction temperature: TJ = 175 °C \n? High speed switching series \n? Minimized tail current \n? Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A \n? Tight parameter distribution \n? Safe paralleling \n? Positive VCE(sat) temperature coefficient \n? Low thermal resistance \n? Very fast soft recovery antiparallel diode;

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.\n\n

STSTMicroelectronics

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STGB30H60DLFB

Trenchgatefield-stopIGBT,HBseries600V,30Ahighspeed

Description ThesedevicesareIGBTsdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThedeviceispartofthenewHB seriesofIGBTs,whichrepresentanoptimum compromisebetweenconductionandswitching lossestomaximizetheefficiencyofany frequencyconve

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGB30H60DLLFBAG

Automotive-gradetrenchgatefield-stopIGBT,HBseries600V,30Ahighspeed

Features ?AEC-Q101qualified ?Maximumjunctiontemperature:TJ=175°C ?Logiclevelgatedrive ?Highspeedswitchingseries ?Minimizedtailcurrent ?VCE(sat)=1.7V(typ.)@IC=30A ?LowVFsoftrecoveryco-packageddiode ?Tightparametersdistribution ?Saferparalleling ?L

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STGF30H60DF

600V,30Ahighspeedtrenchgatefield-stopIGBT

Description ThisdeviceisanIGBTdevelopedusingan advancedproprietarytrenchgateandfieldstop structure.ThisIGBTseriesofferstheoptimum compromisebetweenconductionandswitching losses,maximizingtheefficiencyofveryhigh frequencyconverters.Furthermore,apositive VCE(s

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

技術(shù)參數(shù)

  • Package：

    D2PAK

  • Grade：

    Industrial

  • VCES_max(V)：

    600

  • PTOT_max(W)：

    260

  • Freewheeling diode：

    true

  • IC_max(@ Tc=100°C)(A)：

    30

  • IC_max(@ Tc=25°C)(A)：

    60

  • IF_max(@ Tc=100°C)(A)：

    30

  • IF_max(@ Tc=25°C)(A)：

    60

  • VCE(sat)_typ(V)：

    1.55

  • VF_typ(V)：

    2

  • Qg_typ(nC)：

    149

  • Eon_typ(mJ)：

    0.383

  • Eoff_typ(mJ)：

    0.293

  • Err_typ(μJ)：

    104

  • Qrr_typ(nC)：

    384

供應(yīng)商型號品牌批號封裝庫存備注價格
STM
1809+
TO-263
1675
就找我吧!--邀您體驗愉快問購元件!
 詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細信息,
 詢價
ST
22+
D2PAK
9000
原廠渠道,現(xiàn)貨配單
 詢價
ST/意法
22+
N
30000
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價
STMicroelectronics
2022+
D2PAK
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
ST/意法
24+
NA
14280
強勢渠道訂貨 7-10天
 詢價
ST/意法
22+
N
28000
原裝現(xiàn)貨只有原裝.假一罰十
 詢價
ST
2405+
原廠封裝
50000
15年芯片行業(yè)經(jīng)驗/只供原裝正品:0755-83268823鄒小姐
 詢價
ST
23+
D2PAK
8000
只做原裝現(xiàn)貨
 詢價
24+
N/A
64000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
更多STGB30H60DFB供應(yīng)商 更新時間2021-9-14 10:50:00

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