STD7N60DM2

N溝道600 V、0.78 Ohm典型值、6 A MDmesh DM2功率MOSFET，DPAK封裝; ? Fast-recovery body diode \n? Extremely low gate charge and input capacitance \n? Low on-resistance \n? 100% avalanche tested \n? Extremely high dv/dt ruggedness \n? Zener-protected;

This high voltage N-channel Power MOSFET is part of the MDmesh? DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.\n\n

STD7N60M2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.95Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STD7N60M2

N溝道600 V、0.86 Ohm典型值、5 A MDmesh M2功率MOSFET，DPAK封裝; ? Extremely low gate charge \n? Excellent output capacitance (COSS) profile \n? 100% avalanche tested \n? Zener-protected;

These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.\n\n

STD7N60M6

Marking：7N60M6；Package：DPAK；N-channel 600 V, 780 mΩ typ., 5 A, MDmesh M6 Power MOSFET in a DPAK package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Applications ?Switchingapplications ?LLCconverters ?BoostPFCconverters Description ThenewMDmeshM6technologyincorporate

STD7N60M6

N-channel 600 V, 780 mOhm typ., 5 A MDmesh M6 Power MOSFET in a DPAK package; ? Reduced switching losses \n? Lower RDS(on) per area vs previous generation \n? Low gate input resistance \n? 100% avalanche tested \n? Zener-protected;

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.\n\n

STD7N60M2

Extremely low gate charge