首頁 >STD70N10F4FETIGBTIC>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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N-channel100V,0.015Ω,60A,STripFET?DeepGATE?PowerMOSFETinI2PAK Features ■Exceptionaldv/dtcapability ■Extremelylowon-resistanceRDS(on) ■100avalanchetested Application ■Switchingapplications Description ThisSTripFET?DeepGATE?PowerMOSFET technologyisamongthelatestimprovements, whichhavebeenespeciallytailoredtominimize on- | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
N-channel100V,0.015廓,60A,STripFET??DeepGATE??PowerMOSFETinTO-220,DPAK,TO-247,D2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=65A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.0195Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=65A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.0195Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel100V,0.015廓,60A,STripFET??DeepGATE??PowerMOSFETinTO-220,DPAK,TO-247,D2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS |
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