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STD5N95K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.0A@TC=25℃ ·DrainSourceVoltage-VDSS=950V(Min) ·StaticDrain-SourceOn-Resistance; -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STD5N95K3

N-channel950V,3ohmtyp,4AZener-protectedSuperMESH3

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,render

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF5N95K3

N-channel950V,3ohmtyp,4AZener-protectedSuperMESH3

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,render

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFI5N95K3

N-channel950V,3廓typ.,4AZener-protectedSuperMESH3??PowerMOSFETinI2PAKFPpackage

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP5N95K3

N-channel950V,3ohmtyp,4AZener-protectedSuperMESH3

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,render

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU5N95K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.0A@TC=25℃ ·DrainSourceVoltage-VDSS=950V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STU5N95K3

N-channel950V,3ohmtyp,4AZener-protectedSuperMESH3

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,render

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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