首頁>STD3NB50>規(guī)格書詳情

STD3NB50中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

STD3NB50
廠商型號

STD3NB50

功能描述

N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET

文件大小

75.21 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-7-20 9:02:00

人工找貨

STD3NB50價格和庫存,歡迎聯(lián)系客服免費人工找貨

STD3NB50規(guī)格書詳情

DESCRIPTION

Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 2.5 ?

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

APPLICATIONS

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

產(chǎn)品屬性

  • 型號:

    STD3NB50

  • 功能描述:

    MOSFET N-CH 500V 3A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ST
23+
TO-252
3000
原裝正品假一罰百!可開增票!
詢價
ST
23+
TO-252
8795
詢價
ST
24+
TO-251/252
6430
原裝現(xiàn)貨/歡迎來電咨詢
詢價
ST
17+
TO-251
6200
詢價
ST
TO-252
23+
10000
終端免費提供樣品 可開13%增值稅發(fā)票
詢價
ST/意法
22+
TO-252
100000
代理渠道/只做原裝/可含稅
詢價
ST/意法
24+
NA/
5563
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
詢價
ST/意法
2450+
TO-252
8850
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
詢價
ST/意法
04+
TO-252
10000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
ST
23+
TO-89
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
詢價