首頁(yè) >STD30P06>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
P-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
P-ChannelLogicLevelEnhancementModeFieldEffectTransistor Features: ●LowGateChargeforFastSwitchingApplication ●FastSwitching ●HighPowerandcurrenthandingcapability ●GreenDeviceAvailable Description: TheADM30P06EisthehighcelldensitytrenchedP-chMOSFETs,designtoprovideexcellentRDS(ON)withlowgatecharge.providesuper | ADVAdvanced (Shenzhen) Electronics Co.,Ltd 愛(ài)德微愛(ài)德微(深圳)電子有限公司 | ADV | ||
P-Channel60-V(D-S)MOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
TMOSPOWERFET30AMPERES60VOLTS TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
P-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
PowerMOSFET30Amps,60VoltsP-ChannelD2PAK ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET30AMPERES60VOLTS TMOSPOWERFET30AMPERES60VOLTSRDS(on)=0.080OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOS | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerMOSFET30Amps,60VoltsP??hannelD2PAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET30Amps,60VoltsP??hannelD2PAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerMOSFET30Amps,60VoltsP-ChannelD2PAK ThisPowerMOSFETisdesignedtowithstandhighenergyinthe avalancheandcommutationmodes.Designedforlowvoltage,high speedswitchingapplicationsinpowersupplies,convertersandpower motorcontrols,thesedevicesareparticularlywellsuitedforbridge circuitswherediodespeedan | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
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