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STD13NM60N

Low gate input resistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD13NM60N

N-channel 600 V, 0.28 廓 typ., 11 A MDmesh??II Power MOSFET in TO-220FP, I?PAK, TO-220, IPAK, TO-247 packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD13NM60N

N溝道600 V、0.28 Ohm典型值、11 A MDmesh(TM) II功率MOSFET，DPAK封裝; ? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.\n\n

STSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD13NM60N

絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STD13NM60ND

N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD13NM60ND

N-channel 600 V, 325 mOhm typ., 11 A FDmesh II Power MOSFET in a DPAK package; ? Fast-recovery body diode \n? Low gate charge and input capacitance \n? Low on-resistance RDS(on) \n? 100% avalanche tested \n? High dv/dt ruggedness;

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.\n\n

STSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD13NM60ND

絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc N-Channel Mosfet Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

技術(shù)參數(shù)

  • Package：

    DPAK

  • Grade：

    Industrial

  • VDSS(V)：

    600

  • RDS(on)_max(@ VGS=10V)(Ω)：

    0.36

  • Drain Current (Dc)_max(A)：

    11

  • PTOT_max(W)：

    90

  • Qg_typ(nC)：

    30

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
24+
TO252
8950
BOM配單專(zhuān)家,發(fā)貨快,價(jià)格低
 詢價(jià)
ST
23+
TO252
6996
只做原裝正品現(xiàn)貨
 詢價(jià)
ST/意法半導(dǎo)體
22+
TO-252-3
6001
原裝正品現(xiàn)貨 可開(kāi)增值稅發(fā)票
 詢價(jià)
ST/意法
22+
TO-252
30000
原裝正品
 詢價(jià)
STM
23+
TO-252-3 (DPAK)
2500
原裝現(xiàn)貨支持送檢
 詢價(jià)
ST專(zhuān)家
2021+
DPAK
6800
原廠原裝,歡迎咨詢
 詢價(jià)
ST(意法半導(dǎo)體)
24+
TO-252
9555
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
ST/意法
24+
TO-252
504550
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
ST
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
ST/意法
21+
TO-252-3
10000
只做原裝,假一罰十
 詢價(jià)
更多STD13NM60N供應(yīng)商 更新時(shí)間2025-7-30 16:36:00

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