STD12NM50ND

N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package; The worldwide best R\nDS(on)* area amongst the fast recovery diode devices\nLow input capacitance and gate charge\n100% avalanche tested\nExtremely high dv/dt and avalanche capabilities\nLow gate input resistance\n;

The FDmesh? II series belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.\n

STD12NM50ND

N-channel 500 V, 0.29 廓, 11 A, FDmesh??II Power MOSFET (with fast diode), D2PAK, DPAK

Description FDmesh?technologycombinestheMDmesh?featureswithanintrinsicfast-recoverybodydiode.Theresultingproducthasreducedonresistanceandfastswitchingcommutations,makingitespeciallysuitableforbridgetopologieswherelowtrrisrequired. ■100avalanchetested ■Lowi

STD12NM50ND

N-channel 500V, 0.29 OHM, 11A, FDmesh II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP

STD12NM50ND

絲印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

STF12NM50N

N-channel500V-0.29廓-11A-TO-220/FP-D2PAK-DPAKSecondgenerationMDmesh??PowerMOSFET

Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemos

STF12NM50N

N-channel500V,0.29廓,11AMDmesh??IIPowerMOSFETTO-220-DPAK-D2PAK-I2PAK-TO-220FP

STF12NM50ND

iscN-ChannelMOSFETTransistor

STF12NM50ND

PowerMOSFET

STF12NM50ND

N-channel500V,0.29OHM,11A,FDmeshIIPowerMOSFET(withfastdiode)inD2PAK,DPAK,TO-220FP

STI12NM50N

N-channel500V,0.29廓,11AMDmesh??IIPowerMOSFETTO-220-DPAK-D2PAK-I2PAK-TO-220FP