首頁(yè) >STD10P6F6IC>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
P-channel60V,0.15廓typ.,10ASTripFET??VIDeepGATE??PowerMOSFETinDPAKandTO-220packages Description ThesedevicesareP-channelPowerMOSFETsdevelopedusingtheSTripFET?F6technology,withanewtrenchgatestructure.TheresultingPowerMOSFETsexhibitverylowRDS(on)inallpackages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
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