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STB23N80K5

N-channel800V,0.23廓typ.,16AMDmesh??K5PowerMOSFETinaD?PAKpackage

STMICROELECTRONICSSTMicroelectronics

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STF23N80K5

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STF23N80K5

N-channel800V,0.23廓typ.,16AMDmesh??K5PowerMOSFETinaTO-220FPpackage

STMICROELECTRONICSSTMicroelectronics

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STP23N80K5

N-channel800V,0.23廓typ.,16AMDmesh??K5PowerMOSFETinaTO-220package

Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh?K5 technologybasedonaninnovativeproprietary verticalstructure.Theresultisadramatic reductioninon-resistanceandultra-lowgate chargeforapplicationsrequiringsuperiorpower densityandhighe

STMICROELECTRONICSSTMicroelectronics

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STW23N80K5

N-channel800V,0.23廓typ.,16AMDmesh??K5PowerMOSFETinaTO-247package

STMICROELECTRONICSSTMicroelectronics

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