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SSM6N7002CFU

High-SpeedSwitching

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM6N7002FU

DualN-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SSM6N7002FU

HighSpeedSwitchingApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM6N7002FU

HighSpeedSwitchingApplicationsAnalogSwitchApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM6N7002KFU

High-SpeedSwitching

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM6N7002KFU

MOSFETsSiliconN-ChannelMOS

1.Applications ?High-SpeedSwitching 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)Lowdrain-sourceon-resistance :RDS(ON)=1.05Ω(typ.)(@VGS=10V) RDS(ON)=1.15Ω(typ.)(@VGS=5.0V) RDS(ON)=1.2Ω(typ.)(@VGS=4.5V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM6N7002KFULF

MOSFETsSiliconN-ChannelMOS

1.Applications ?High-SpeedSwitching 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)Lowdrain-sourceon-resistance :RDS(ON)=1.05Ω(typ.)(@VGS=10V) RDS(ON)=1.15Ω(typ.)(@VGS=5.0V) RDS(ON)=1.2Ω(typ.)(@VGS=4.5V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM6N7002KFULXG

MOSFETsSiliconN-ChannelMOS

1.Applications ?High-SpeedSwitching 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)Lowdrain-sourceon-resistance :RDS(ON)=1.05Ω(typ.)(@VGS=10V) RDS(ON)=1.15Ω(typ.)(@VGS=5.0V) RDS(ON)=1.2Ω(typ.)(@VGS=4.5V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM6N7002KFULXH

MOSFETsSiliconN-ChannelMOS

1.Applications ?High-SpeedSwitching 2.Features (1)AEC-Q101qualified(Pleaseseetheorderablepartnumberlist) (2)Lowdrain-sourceon-resistance :RDS(ON)=1.05Ω(typ.)(@VGS=10V) RDS(ON)=1.15Ω(typ.)(@VGS=5.0V) RDS(ON)=1.2Ω(typ.)(@VGS=4.5V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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