首頁 >SPP11N60C3>規(guī)格書列表
零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
SPP11N60C3 | Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | ||
SPP11N60C3 | Cool MOS Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?150°Coperatingtemperature | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | ||
SPP11N60C3 | N-Channel MOSFET Transistor ?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.38? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perform | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ||
SPP11N60C3 | N-Channel 650 V (D-S) MOSFET FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | ||
SPP11N60C3 | 絲?。?a target="_blank" title="Marking" href="/11n60c3/marking.html">11N60C3;Package:PG-TO220;Cool MOS? Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | ||
SPP11N60C3 | 500V-900V CoolMOS? N-Channel Power MOSFET Replacement for 600V CoolMOS? C3 is CoolMOS? P7\n 600V CoolMOS? C3 is Infineon's third series of CoolMOS? with market entry in 2001. C3 is the \"working horse\" of the portfolio. \n; ? Low specific on-state resistance (RDS(on)*A)\n? Very low energy storage in output capacitance (Eoss) @400V\n? Low gate charge (Qg)\n? Fieldproven CoolMOS? quality\n? CoolMOS? technology has been manufactured by Infineon since 1998\n\n優(yōu)勢:\n? High efficiency and power density\n? Outstanding cost/per; | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | ||
SPP11N60C3 | 絲印:11N60C3;Package:PG-TO220;Cool MOS??Power Transistor Feature New revolutionary high voltage technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | ||
SPP11N60C3 | Cool MOS??Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | ||
Cool MOS? Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | |||
Cool MOS??Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 |
技術參數(shù)
- Package?:
TO-220
- VDS?max:
600.0V
- RDS (on)?max:
380.0m?
- Polarity?:
N
- ID ?max:
11.0A
- Ptot?max:
125.0W
- IDpuls?max:
33.0A
- VGS(th)?min?max:
2.1V?3.9V
- QG?:
45.0nC?
- Rth?:
1.0K/W?
- RthJC?max:
1.0K/W
- RthJA?max:
62.0K/W
- Operating Temperature?min:
-55.0°C?
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
1907+ |
NA |
3500 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
INFINEONE |
23+ |
TO-220 |
18689 |
原裝正品價格優(yōu)惠,長期優(yōu)勢供應 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-220 |
10000 |
只做原裝歡迎含稅交易,假一賠十,放心購買 |
詢價 | ||
INFINEON/英飛凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飛凌原裝特價SPP11N60C3即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
ST |
851 |
TO-220 |
3300 |
全新原裝絕對自己公司現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
TO-220 |
65400 |
詢價 | |||
INFINEON/英飛凌 |
24+ |
TO-220 |
17703 |
原裝進口假一罰十 |
詢價 | ||
INFINEON |
23+ |
TO220F |
6996 |
只做原裝正品現(xiàn)貨 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-220 |
5 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
INFINEON |
19+ |
300 |
PG-TO220-3 |
詢價 |
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