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SPD02N60S5

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapp

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N60S5

N-Channel MOSFET Transistor

?DESCRITION ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPD02N60S5

Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPN02N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPN02N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP02N60S5

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

SPP02N60S5

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤3? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformancean

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPU02N60S5

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    SPD02N60S5

  • 功能描述：

    MOSFET COOL MOS N-CH 600V 1.8A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON/英飛凌
24+
SOT-252
17299
原裝進(jìn)口假一罰十
 詢價(jià)
INFINEON
23+
TO252
6996
只做原裝正品現(xiàn)貨
 詢價(jià)
INFINEON/英飛凌
24+
5000
只做原廠渠道 可追溯貨源
 詢價(jià)
INFINEON/英飛凌
2021+
TO-252
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
 詢價(jià)
INFINEON
24+
TO-252
45000
詢價(jià)
INFINEON
2016+
SOT-252
5786
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
INFINEON
24+
原封裝
1995
原裝現(xiàn)貨假一罰十
 詢價(jià)
INFINEON
23+
TO-252
5000
原裝正品,假一罰十
 詢價(jià)
infineon
12+
TO-252(DPAK)
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
INFINEON
1645+
TO-252
7500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
更多SPD02N60S5供應(yīng)商 更新時(shí)間2025-6-25 14:03:00

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