SPH20S200-C-B

Marking：SPH20S200；Package：TO-220C；SCHOTTKY BARRIER DIODE

APPLICATIONS ?Highfrequencyswitch powersupply ?Freewheelingdiodes, polarityprotection applications FEATURES ?Commoncathodestructure ?Lowpowerloss,highefficiency ?HighOperatingJunction Temperature ?Guardringforovervoltage protection，Highreliability ?RoHSproduct

SPH20S200-F1-B

Marking：SPH20S200；Package：TO-220MF-K1；SCHOTTKY BARRIER DIODE

APPLICATIONS ?Highfrequencyswitch powersupply ?Freewheelingdiodes, polarityprotection applications FEATURES ?Commoncathodestructure ?Lowpowerloss,highefficiency ?HighOperatingJunction Temperature ?Guardringforovervoltage protection，Highreliability ?RoHSproduct

SSM6J502NU

Marking：SP2；Package：UDFN6B；MOSFETs Silicon P-Channel MOS

1.Applications ?PowerManagementSwitches 2.Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=60.5mΩ(max)(@VGS=-1.5V) RDS(ON)=38.4mΩ(max)(@VGS=-1.8V) RDS(ON)=28.3mΩ(max)(@VGS=-2.5V) RDS(ON)=23.1mΩ(max)(@VGS=-4.5V)

SSM6J505NU

Marking：SP5；Package：UDFN6B；MOSFETs Silicon P-Channel MOS

1.Applications ?PowerManagementSwitches 2.Features (1)1.2Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=61mΩ(max)(@VGS=-1.2V) RDS(ON)=30mΩ(max)(@VGS=-1.5V) RDS(ON)=21mΩ(max)(@VGS=-1.8V) RDS(ON)=16mΩ(max)(@VGS=-2.5V) RDS(ON)=12m

SSM6J512NU

Marking：SPB；Package：UDFN6B；MOSFETs Silicon P-Channel MOS

1.Applications ?PowerManagementSwitches 2.Features (1)1.8Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=24.0mΩ(typ.)(@VGS=-1.8V) RDS(ON)=18.3mΩ(typ.)(@VGS=-2.5V) RDS(ON)=14.3mΩ(typ.)(@VGS=-4.5V)

BSL302SN

Marking：sPE；Package：PG-TSOP-6；OptiMOS2 Small-Signal-Transistor

BSP135I

Marking：SP135I；Package：PG-SOT223；Small-Signal Transistor

FS03MR12A6MA1B

Marking：SP001720764；Package：HybridPACK；HybridPACK??Drive module with CoolSiC??Automotive MOSFET

FS03MR12A6MA1LB

Marking：SP002725554；Package：HybridPACK；HybridPACK??Drive module with CoolSiC??Automotive MOSFET

MAX809JTRG

Marking：SPR；Package：SOT23-3；Very Low Supply Current 3-Pin Microprocessor Reset Monitors