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| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FieldServiceKit,RedLarge,ESD | POMONA Pomona Electronics | POMONA | ||
MulitifunctionBacklightLEDDriverforSmallLCDPanels(ChargePumpType) | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
SiliconMonolithicIntegratedCircuit | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,9.5A,RDS(ON)=12.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,9.5A,RDS(ON)=12.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,9.0A,RDS(ON)=14.5mW@VGS=10V. RDS(ON)=18.0mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,9.0A,RDS(ON)=14.5mW@VGS=10V. RDS(ON)=18.0mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
SUBMINIATUREPENTODE | RAYTHEONRaytheon Company. 雷神 | RAYTHEON | ||
Miniature10Base-TInterfaceModule | PCA PCA ELECTRONICS INC. | PCA | ||
Dual/Quad14MHz,Rail-to-RailCMOSAmplifiers | LINERLinear Technology 凌力爾特凌特半導體 | LINER |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
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