首頁 >SF4230T-R>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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HighPowerInfraredEmitter(850nm) Features ?Pointlightsourcewithhighefficiencyandsmall package ?die-size(emittingarea)1x1mm2 ?max.DC-current1A ?Lowthermalresistance(15K/W) ?Maximumofspectralemissionat850nm ?ESDsaveupto2kVacc.toJESD22-A114-B Applications ?Infrared | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
IR-Lumineszenzdiode(850nm)mithoherAusgangsleistung | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
DualN-Channel30-V(D-S)MOSFET FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?100RgandUISTested APPLICATIONS ?LowCurrentDC/DC ?NotebookPC -SystemPower | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
DualN-Channel30-V(D-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SingleWindowSingleModeWidebandFiberCoupler | OPLINK OPLINK Communications Inc. | OPLINK | ||
MiniSingleWindowSingleModeFiberCoupler | OPLINK OPLINK Communications Inc. | OPLINK | ||
MiniSingleWindowSingleModeFiberCoupler | OPLINK OPLINK Communications Inc. | OPLINK | ||
1.2mmDiscreteHFET DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith | TriQuint TriQuint Semiconductor | TriQuint | ||
1.2mmDiscreteHFET DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith | TriQuint TriQuint Semiconductor | TriQuint | ||
DC-12GHzDiscreteHFET Description TheTriQuintTGF4230-SCCisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywithe | TriQuint TriQuint Semiconductor | TriQuint |
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