首頁(yè) >SC1476ITS.TS>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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RF&MICROWAVETRANSISTORSTV/LINEARAPPLICATIONS DESCRIPTION TheSD1476isagoldmetallizedepitaxialsiliconNPNplanartransistorusingdiffusedemitterballastresistorsforhighlinearityClassABoperationinVHFandBandItelevisiontransmittersandtransposers. ■55-88MHz ■32VOLTS ■COMMONEMITTER ■GOLDMETALLIZATION ■INTER | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASISD1476isaplanartransistorusingdiffusedemitterballastedresistorsforhighlinearityClassABoperationinVHFandband1televisiontransmittersandtransposers. FEATURES: ?CommonEmitter ?PG=12dBat240W/88MHz ?Omnigold?MetalizationSystem | ASI Advanced Semiconductor | ASI | ||
SAWFilter1980MHz | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
OFF-LINESWITCHMODETRANSFORMERS GENERALAPPLICATIONINFORMATION PremierMagneticsOff-LineSwitchModeTransformershavebeendesignedforusewithPowerIntegrations,Inc.TOPXXXseriesofoff-linePWMswitchingregulatorsintheFlybackBuck-Boostcircuitconfiguration.Thisconversiontopologycanprovideisolatedmultipleo | PMI Premier Magnetics, Inc. | PMI | ||
SILICONTRANSISTORARRAY NPNSILICONPOWERTRANSISTORARRAY LOWSPEEDSWITCHINGUSE(DARLINGTONTRANSISTOR) INDUSTRIALUSE FEATURES ?Easymountby0.1inchofterminalinterval. ?HighhFEforDarlingtonTransistor. ?SurgeAbsorber(ZenerDiode)builtin. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NPNSILICONPOWERTRANSISTORARRAYLOWSPEEDSWITCHINGUSEDARLINGTONTRANSISTORINDUSTRIALUSE DESCRIPTION TheμPA1476isNPNsiliconepitaxialDarlingtonPowerTransistorArraythatbuiltin4circuitsdesignedfordrivingsolenoid,relay,lampandsoon. FEATURES ?Easymountby0.1inchofterminalinterval. ?HighhFEforDarlingtonTransistor. ?SurgeAbsorber(Zener | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
SILICONTRANSISTORARRAY NPNSILICONPOWERTRANSISTORARRAY LOWSPEEDSWITCHINGUSE(DARLINGTONTRANSISTOR) INDUSTRIALUSE FEATURES ?Easymountby0.1inchofterminalinterval. ?HighhFEforDarlingtonTransistor. ?SurgeAbsorber(ZenerDiode)builtin. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
NPNSILICONPOWERTRANSISTORARRAYLOWSPEEDSWITCHINGUSEDARLINGTONTRANSISTORINDUSTRIALUSE DESCRIPTION TheμPA1476isNPNsiliconepitaxialDarlingtonPowerTransistorArraythatbuiltin4circuitsdesignedfordrivingsolenoid,relay,lampandsoon. FEATURES ?Easymountby0.1inchofterminalinterval. ?HighhFEforDarlingtonTransistor. ?SurgeAbsorber(Zener | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會(huì)社 | NEC | ||
TORODIALINDUCTOR | XFMRS XFMRS，Inc. | XFMRS |
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