首頁(yè) >RV40-06F>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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SmallSignalSchottkyDiodes Features -EpoxymeetsUL-94V-0flammabilityrating. -MoisturesensitivityLevel1. -AEC-Q101Qualified. -Lowforwardvoltageschottkyrectifier. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
Schottkybarrierdoublediodes DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable.ThediodesBAS40,BAS40-04,BAS40-05andBAS40-06areencapsulatedinaSOT23smallplasticSMDpackage.TheBAS40-07isencapsulat | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
SiliconSchottkyDiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Features ?Lowforwardvoltage ?Fastswitching | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司 | SEMTECH_ELEC | ||
TECHNICALSPECIFICATIONSOFSURFACEMOUNTSCHOTTKYBARRIERDIODES VOLTAGE-40VoltsCURRENT-0.2Ampere FEATURES *Forgeneralpurposeapplications *Lowforwardvoltagedrop. *Fastswitchingtime. *ProtectedbyaPNjunctionguardringagainstexcessive voltage,suchaselectrostaticdischarge(ESD). | DCCOM Dc Components | DCCOM | ||
200mW,LowVF,SMDSchottkyBarrierDiode FEATURES -Metal-on-siliconschottkybarrier -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PackingcodewithsuffixGmeans greencompound(halogen-free) | TSCTaiwan Semiconductor Company, Ltd 臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司 | TSC | ||
SiliconSchottkyDiode SiliconSchottkyDiode ?General-purposediodeforhigh-speedswitching ?Circuitprotection ?Voltageclamping ?High-leveldetectingandmixing ?Pb-free(RoHScompliant)package ?QualifiedaccordingAECQ1011) | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SchottkyDiodes FEATURES ?Thesediodesfeatureverylowturn-on voltageandfastswitching. ?ThesedevicesareprotectedbyaPN junctionguardringagainstexcessive voltage,suchaselectrostaticdischarges. | GE GE Industrial Company | GE | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODE Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits ?Low | DIODESDiodes Incorporated 美臺(tái)半導(dǎo)體 | DIODES | ||
SiliconSchottkyDiodes(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclamping) HiRelSiliconSchottkyDiode Features ?HiRelDiscreteandMicrowaveSemiconductor ?General-purposediodesforhigh-speedswitching ?Circuitprotection ?Voltageclamping ?High-leveldetectingandmixing ?Hermeticallysealedmicrowavepackage ?ESAQualificationpending | SIEMENSSiemens Semiconductor Group 西門(mén)子德國(guó)西門(mén)子股份公司 | SIEMENS |
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