首頁 >RTL8152B-VB-CGIC>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
8-ChannelEMIFilterwithIntegratedESDProtection | ONSEMION Semiconductor 安森美半導體安森美半導體公司 | ONSEMI | ||
MICROWAVENOISETUBES&NOISESOURCES DESCRIPTION CPClare’sTDSeriesofgasdischargemicrowavenoisetubesandTNSeriesofgasdischargemicrowavenoisesourcesaretheelementinamicrowaveRFsystemthatallowsaccuratemeasurementsofthenoisefigureofthereceiveroritscomponents.Therequirementsofadeviceusedforma | Clare Clare, Inc. | Clare | ||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES ?Lowcurrentconsumption:UPC8128TA;ICC=2.8mATYP.@VCC=3.0V UPC8151TA;ICC=4.2mATYP.@VCC=3.0V UPC8152TA;ICC=5.6mATYP.@VCC=3.0V ?Supplyvoltage:VCC=2.4to3.3V ?Highefficiency:UPC8128TA;PO(1dB)=-4.0dBmTYP.@f=1GHz UPC8151TA;PO | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES ?Supplyvoltage:VCC=2.4to3.3V ?Lowcurrentconsumption:UPC8128TB;ICC=2.8mATYP.@VCC=3.0V UPC8151TB;ICC=4.2mATYP.@VCC=3.0V UPC8152TB;ICC=5.6mATYP.@VCC=3.0V ?Highefficiency:UPC8128TB;PO(1dB)=?4.0dBmTYP.@f=1GHz UPC8151TB;PO(1dB) | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheμPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50?widebandmatchedIC.Thislowcurrentamplifieroperateson3.0 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
BIPOLARANALOGINTEGRATEDCIRCUIT | CEL California Eastern Labs | CEL | ||
SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION TheμPC8128TB,μPC8151TBandμPC8152TBaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellularorcordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(eg1005size)whichcannotberealizedoninternal50 | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS | CEL California Eastern Labs | CEL |
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