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sit8103

SITIMESiTime Corp.

賽特時(shí)脈美商賽特時(shí)脈股份有限公司

SPW8103S

DualOP-AMPand2.5V0.7VoltageReference

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

TPC8103

TRANSISTORSILICONPCHANNELMOSTYPE

LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceONresistance:RDS(ON)=9.5m?(typ.) ?Highforwardtransferadmittance:|Yfs|=20S(typ.) ?Lowleakagecurrent:IDSS=?10μA(max)(VDS=?

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPC8103

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

TPCA8103

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?Notebook -LoadSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

TPCA8103

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCA8103

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOS4)

NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance: RDS(ON)=9.4mΩ(typ.)(VGS=?10V) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) ?Enhancementmode:

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCC8103

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCC8103

NoteboookPCApplicationsPortableEqipmentApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCC8103

FieldEffectTransistorSiliconP-ChannelMOSType(U-MOS??

NotebookPCApplications PortableEquipmentApplications ?Smallfootprintduetoasmallandthinpackage ?Lowdrain-sourceON-resistance: RDS(ON)=9.4mΩ(typ.)(VGS=?10V) ?Lowleakagecurrent:IDSS=-10μA(max)(VDS=-30V) ?Enhancementmode:V

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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