首頁 >RD5.6FS>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DO-34PackageLownoise,SharpBreakdowncharacteristics400mWZenerDiode [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
SILICONZENERDIODES | EIC EIC discrete Semiconductors | EIC | ||
SILICONZENERDIODES | EIC EIC discrete Semiconductors | EIC | ||
ZENERDIODES200mW3-PINMINIMOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
ZENERDIODES200mW3-PINMINIMOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
ZENERDIODES200mW3-PINMINIMOLD TypeRD2.0MWtoRD39MWSeriesare3-PINMiniMoldPackagezenerdiodespossessingallowablepowerdissipationof200mW. | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
1WPOWERMINIMOLDZENERDIODE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
1WPOWERMINIMOLDZENERDIODE | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實業(yè)有限公司 | SKTECHNOLGY | ||
ZENERDIODES200mW2PINSSUPERMINIMOLD DESCRIPTION TypeRD2.0StoRD120SSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mW. FEATURES ?SharpBreakdowncharacteristic. ?Vz:AppliedE24standard. APPLICATIONS CircuitforConstantVoltage,ConstantCurrent,W | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
ZENERDIODES DESCRIPTION TypeRD4.7SLtoRD39SLSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mWfeaturinglownoiseandsharpbreakdowncharacteristic.Theyareintendedforuseinaudioequipment,instrumentequipment. FEATURES ?LowNoise | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC |
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