首頁 >RC6602>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NandP-ChannelEnhancementModePowerMOSFET GeneralFeatures N-Channel VDS=30V,ID=3.5A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
SiCSchottkyBarrierDiodeBareDie Features 1)Lowforwardvoltage 3)Temperatureindependentswitchingbehavior 2)Negligiblerecoverytime/current 4)Highsurgecurrentcapability Applications ?SwitchModePowerSupply ?EVCharger ?UninterruptiblePowerSupply ?AirConditioner ?SolarInverter ?MotorDrive | ROHMRohm 羅姆羅姆半導體集團 | ROHM | ||
N&PPairEnhancementModeMOSFET | SYNC-POWERSYNC POWER Crop. 擎力科技擎力科技股份有限公司 | SYNC-POWER | ||
N-andP-Channel20V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
DualN&PChannelEnhancementModeMOSFET | STANSON Stanson Technology | STANSON | ||
N-andP-Channel20V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
N-Ch:3.3A,30V,RDS(ON)65mP-Ch:-2.3A,-30V,RDS(ON)120mN&P-ChannelEnhancementModeMos.FET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
High-SpeedSwitchingApplications | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
TOSHIBATRANSISTORSILICONPNPEPITAXIALTYPE | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA |
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