首頁 >RB2N65CCN>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementMOSFET Features ?VDS=650V,ID=2A ?RDS(ON)=4Ω@VGS=10V(Typ.) ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
N-ChannelEnhancementMOSFET Features ?VDS=650V,ID=2A ?RDS(ON)=3.6Ω@VGS=10V(Typ.) ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
N-CHANNELENHANCEMENTMODEMOSFET FEATURES LowCrss Lowgatecharge Fastswitching ImprovedESDcapability Improveddv/dtcapability 100%avalancheenergytest | RECTRON Rectron Semiconductor | RECTRON | ||
CompositeTransistorForMutingApplicationSiliconNPNEpitaxialType DESCRIPTION RT2N65Misacompositetransistorwithbuilt-inbiasresistor FEATURE ●Built-inbiasresistor(R1=10KΩ) ●Minipackageforeasymounting APPLICATION mutingcircuit、switchingcircuit | ISAHAYAIsahaya Electronics Corporation 諫早電子諫早電子株式會社 | ISAHAYA | ||
N-CHANNELPOWERMOSFET | SISEMICShenzhen SI Semiconductors Co.,LTD. 深愛半導(dǎo)體深圳深愛半導(dǎo)體股份有限公司 | SISEMIC | ||
N-CHANNELPOWERMOSFET | SISEMICShenzhen SI Semiconductors Co.,LTD. 深愛半導(dǎo)體深圳深愛半導(dǎo)體股份有限公司 | SISEMIC | ||
650VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半導(dǎo)體有限公司 | MAPLESMI | ||
650VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半導(dǎo)體有限公司 | MAPLESMI | ||
650VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半導(dǎo)體有限公司 | MAPLESMI | ||
650VN-ChannelMOSFET | MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd 美普森深圳市美普森半導(dǎo)體有限公司 | MAPLESMI |
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