QPD1028L

1.2 - 1.4 GHz 750 Watt 65 Volt GaN Input-Matched Transistor; ? Operating Frequency Range: 1.2 - 1.4 GHz\n? Saturated Output Power PSAT: 59dBm\n? Drain Efficiency at PSAT: 70%\n? Large Signal Gain at PSAT: 18 dB\n? Bias: VDS=+65V, IDQ=750mA\n? Package Type: NI-780\n? Package Dimensions: 20.57 x 9.78 x 3.63 mm\n;

The QPD1028L is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.Evaluation boards are available upon request.?\n

QPD1028L

750 W, 65 V, 1.2 ??1.4 GHz, GaN RF Input-Matched Transistor

KeyFeatures FrequencyRange:1.2to1.4GHz LinearGain1:19.8dB OutputPower(P3dB)1:838.5W DrainEfficiency(P3dB)1:67.3 OperatingVoltage:65V CWandPulsecapable

QPD1028LEVB

750 W, 65 V, 1.2 ??1.4 GHz, GaN RF Input-Matched Transistor

KeyFeatures FrequencyRange:1.2to1.4GHz LinearGain1:19.8dB OutputPower(P3dB)1:838.5W DrainEfficiency(P3dB)1:67.3 OperatingVoltage:65V CWandPulsecapable

QPQ1028

Dual-UseGPSL1/L2DualFilter

KeyFeatures ?UsableBandwidth24MHz ?LowInsertionLoss:

QPQ1028EVB

Dual-UseGPSL1/L2DualFilter

KeyFeatures ?UsableBandwidth24MHz ?LowInsertionLoss:

QPQ1028SR

Dual-UseGPSL1/L2DualFilter

KeyFeatures ?UsableBandwidth24MHz ?LowInsertionLoss:

RFHA1028

160WGaNWide-BandPulsedPowerAmplifier

RH1028M

UltralowNoisePrecisionHighSpeedOpAmps

RH1028M

UltralowNoisePrecisionHighSpeedOpAmps

RH1028MW

UltralowNoisePrecisionHighSpeedOpAmps