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PHD96NQ03LT

N-channel enhancement mode field-effect transistor

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■OptimizedasacontrolFETinDCtoDCconverters.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHD96NQ03LT

N-channel TrenchMOS logic level FET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PHD96NQ03LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHD96NQ03LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHP96NQ03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHP96NQ03LT

N-channelenhancementmodefield-effecttransistor

Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■OptimizedasacontrolFETinDCtoDCconverters.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

詳細(xì)參數(shù)

  • 型號(hào):

    PHD96NQ03LT

  • 功能描述:

    兩極晶體管 - BJT TAPE13 MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

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PHI
SOT252
30216
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PHI
24+
400
只做原廠渠道 可追溯貨源
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恩XP
24+
TO-252
504370
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
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PH
24+
SOT78TO-220AB
8866
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PHI
23+
TO-252
8890
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PHI
2020+
TO-252
470
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
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PHI
1715+
SOP
251156
只做原裝正品現(xiàn)貨假一賠十!
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恩XP
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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恩XP
24+
TO252
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
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PHI
24+
TO-252
6430
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更多PHD96NQ03LT供應(yīng)商 更新時(shí)間2025-7-16 14:01:00