首頁 >PHD66NQ03LTA>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=66A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channelTrenchMOSlogiclevelFET 1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國)有限公司 | NEXPERIA | ||
N-channelTrenchMOStransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHP66NQ03LTinSOT78(TO-220AB) PHB66NQ03LTinSOT404(D2-PAK) PHD66NQ03LTinSOT428(D-PAK) Features ■Lowon-stateresistance ■Fastswitching | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=66A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channelTrenchMOStransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHP66NQ03LTinSOT78(TO-220AB) PHB66NQ03LTinSOT404(D2-PAK) PHD66NQ03LTinSOT428(D-PAK) Features ■Lowon-stateresistance ■Fastswitching | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-channelTrenchMOStransistor Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHP66NQ03LTinSOT78(TO-220AB) PHB66NQ03LTinSOT404(D2-PAK) PHD66NQ03LTinSOT428(D-PAK) Features ■Lowon-stateresistance ■Fastswitching | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=66A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=66A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10.5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI |
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