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PESD3V3L1BSF

Marking：4D；Package：SOD962-2；Very low clamping bidirectional ESD protection diode

1.Generaldescription VerylowclampingbidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotect onesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishousedina leadlessultrasmallDSN0603-2(SOD962)Surface-MountedDevice(SMD)package.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD3V3L1BSL

Marking：0H；Package：SOD882-S1；ESD protection device

1.Generaldescription BidirectionalElectroStaticDischarge(ESD)protectiondiodeinaDFN1006-2(SOD882-S1) leadlessultrasmallSurface-MountedDevice(SMD)plasticpackagedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits ?B

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD3V3L1UA

Marking：1H；Package：SOD323；Low capacitance unidirectional ESD protection diodes

1.1Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodesinsmall Surface-MountedDevice(SMD)plasticpackagesdesignedtoprotectonesignallinefrom thedamagecausedbyESDandothertransients. 1.2Features 1.3Applications Table1.Product

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD3V3L1UA

Marking：03W；Package：SOD-323；300Watts peak pulse power (tp = 8/20μs)

Features 300Wattspeakpulsepower(tp=8/20μs) Unidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)20A(8/20μs) Applications US

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

PESD3V3L1UB

Marking：Z7；Package：SC-79；Low capacitance unidirectional ESD protection diode

1.Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodeinanultrasmalland flatleadSOD523(SC-79)Surface-MountedDevice(SMD)plasticpackagesdesignedtoprotect onesignallinefromthedamagecausedbyESDandothertransients. 2.Feature

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD3V3L1UB

Marking：Z7；Package：SOD523；Low capacitance unidirectional ESD protection diodes

1.1Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodesinsmall Surface-MountedDevice(SMD)plasticpackagesdesignedtoprotectonesignallinefrom thedamagecausedbyESDandothertransients. 1.2Features 1.3Applications Table1.Product

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD3V3L1UB

Marking：Z7；Package：SOD-523；Unidirectional ESD protection of one line

Features Applications ESDprotectionupto30kV Lowdiodecapacitance:Cd=34pF IEC61000-4-2;level4(ESD) Lowclampingvoltage:VCL=11V AEC-Q101qualified Verylowleakagecurrent:IRM=100nA Computersandperipherals SubscriberIdentityModule(SIM)card protection Audioa

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司

PESD3V3L1UL

BIDIRECTIONAL TVS DIODE

Features Protectsonedataline Ultralowleakage:nAlevel Operatingvoltage:3.3V Ultralowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-5(Lightning)8A(8/20μs) RoHSCompliant App

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

PESD3V3L1UL

Marking：XW；Package：SOD882；Low capacitance unidirectional ESD protection diodes

1.1Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodesinsmall Surface-MountedDevice(SMD)plasticpackagesdesignedtoprotectonesignallinefrom thedamagecausedbyESDandothertransients. 1.2Features 1.3Applications Table1.Product

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PESD3V3L1ULS

Marking：8N；Package：DFN1006BD-2；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignalline fromthedamagecausedbyESDandothertransients.Thedeviceishousedinaleadlessultra smallDFN1006BD-2(SOD882BD)Surface-MountedDevice(SMD)plasticpackagewithsi

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

詳細參數(shù)

  • 型號：

    PESD3V3

  • 功能描述：

    TVS 二極管 - 瞬態(tài)電壓抑制器 3.3V BIDIRECTION ESD

  • RoHS：

    否

  • 制造商：

    Vishay Semiconductors

  • 極性：

    Bidirectional

  • 擊穿電壓：

    58.9 V

  • 鉗位電壓：

    77.4 V

  • 峰值浪涌電流：

    38.8 A

  • 封裝/箱體：

    DO-214AB

  • 最小工作溫度：

    - 55 C

  • 最大工作溫度：

    + 150 C

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更多PESD3V3供應商 更新時間2025-6-23 16:22:00

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