首頁 >PEB1757EIC>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
BCDOUTPUTSYNCHROTODIGITALCONVERTERS | ADAnalog Devices 亞德諾亞德諾半導體技術(shù)有限公司 | AD | ||
SAWTxFilter847MHzLTEBand20SMD1411(30MHzBW) | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
SAWFilter847MHz | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE Description ThisproductisDualN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationofnotebookcomputers,andLi-ionbatteryapplication. Features ?DualMOSFETchipsinsmallpackage ?2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23m?(MAX.)(VGS | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR Description ThisproductisDualN-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationof notebookcomputers,andLi-ionbatteryapplication. Features ?DualMOSFETchipsinsmallpackage ?2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23mΩ(MAX.)(VG | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR Description ThisproductisDualN-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationof notebookcomputers,andLi-ionbatteryapplication. Features ?DualMOSFETchipsinsmallpackage ?2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23mΩ(MAX.)(VG | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE Description ThisproductisDualN-ChannelMOSFieldEffectTransistordesignedforpowermanagementapplicationofnotebookcomputers,andLi-ionbatteryapplication. Features ?DualMOSFETchipsinsmallpackage ?2.5Vgatedrivetypeandlowon-resistance RDS(on)1=23m?(MAX.)(VGS | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
DIESETENVELOPEDRAWING | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC |
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