PDTC143ET

絲?。?a target="_blank" title="Marking" href="/-02/marking.html">-02；Package：SOT-23；NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

ETC

PDTC143ET

絲?。?a target="_blank" title="Marking" href="/02/marking.html">02；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTA143ET 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducesco

PDTC143ET

PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k?

Featuresandbenefits *100mAoutputcurrentcapability *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts *AEC-Q101qualified

PDTC143ET

絲?。?a target="_blank" title="Marking" href="/-02/marking.html">-02；Package：SOT-23；NPN resistor-equipped transistor

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PHI

PDTC143ET

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ; ? 100 mA output current capability\n? Built-in bias resistors\n? Simplifies circuit design\n? Reduces component count\n? Reduces pick and place costs\n? AEC-Q101 qualified\n;

NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages.\n

PDTC143ET

絲?。?a target="_blank" title="Marking" href="/-02/marking.html">-02；Package：SOT-23；Low VCEsat (BISS) transistors

PHI

PDTC143ET-Q

50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ; ? 100 mA output current capability\n? Built-in bias resistors\n? Simplifies circuit design\n? Reduces component count\n? Reduces pick and place costs\n? Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PDTA143ET\n

PDTC143ET-Q

絲?。?a target="_blank" title="Marking" href="/02/marking.html">02；Package：SOT23；50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTA143ET 2.Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducesco

PDTC143ET,215

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 50V TO236AB

ETC

PDTC143ET,235

Package：TO-236-3，SC-59，SOT-23-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 單，預(yù)偏置 描述：TRANS PREBIAS NPN 50V TO236AB

ETC