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PD20015-E

15W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package; ? Excellent thermal stability\n? Common source configuration\n? POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V? Plastic package\n? ESD protection\n? In compliance with the 2002/95/EC european directive;

The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20015-E’s superior linearity performance makes it an ideal solution for mobile radio applications.\n The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.\n

STSTMicroelectronics

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PD20015-E

RF power transistor, LdmoST family

Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

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PD20015-E

Package:PowerSO-10RF 裸露底部焊盤(pán)(2 條成形引線);包裝:托盤(pán) 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 描述:TRANS RF PWR N-CH POWERSO-10RF

STMICROELECTRONICSSTMicroelectronics

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PD20015S-E

RFpowertransistor,LdmoSTfamily

Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

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PD20015STR-E

RFpowertransistor,LdmoSTfamily

Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

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PD20015TR-E

RFpowertransistor,LdmoSTfamily

Description ThePD20015-EisacommonsourceN-channel,enhancement-modelateralfield-effectRFpowertransistor.Itisdesignedforhighgain,broadbandcommercialandindustrialapplications.Itoperatesat13.6Vincommonsourcemodeatfrequenciesofupto1GHz.PD20015-Eboaststheexcell

STMICROELECTRONICSSTMicroelectronics

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產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    PD20015-E

  • 制造商:

    STMicroelectronics

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET,MOSFET - 射頻

  • 包裝:

    托盤(pán)

  • 晶體管類型:

    LDMOS

  • 頻率:

    2GHz

  • 增益:

    11dB

  • 額定電流(安培):

    7A

  • 功率 - 輸出:

    15W

  • 封裝/外殼:

    PowerSO-10RF 裸露底部焊盤(pán)(2 條成形引線)

  • 供應(yīng)商器件封裝:

    PowerSO-10RF(成形引線)

  • 描述:

    TRANS RF PWR N-CH POWERSO-10RF

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
23+
1688
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STM
16+
NA
8800
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24+
SMD
5500
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ST
23+
原廠封裝
13528
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STM
1809+
SOP-10
326
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ST(意法)
23+
NA
20094
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22+
NA
140
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ST/意法半導(dǎo)體
2021+
10RF-Formed-4
7600
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ST/意法半導(dǎo)體
24+
10RF-Formed-4
6000
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ST/意法半導(dǎo)體
21+
10RF-Formed-4
8860
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更多PD20015-E供應(yīng)商 更新時(shí)間2025-7-30 10:31:00