PCF8582C-2

256 x 8-bit CMOS EEPROMS with I2C-bus interface

PHI

PCF8582C-2

256 x 8-bit CMOS EEPROM with I2C-bus interface

PHI

PCF8582C-2P

256 to 1024 ? 8-bit CMOS EEPROMs with I2C-bus interface

GENERALDESCRIPTION ThePCF85xxC-2isafamilyoffloatinggateElectricallyErasableProgrammableReadOnlyMemories(EEPROMs)with2,4and8kbits(256,512and1024×8-bit).Byusinganinternalredundantstoragecodeitisfaulttoleranttosinglebiterrors.Thisfeaturedramaticallyincreas

PHI

PCF8582C-2P

帶有I2C總線接口的256 x 8位CMOS EEPROM; 低功率CMOS： 2.0 mA最大工作電流\n最大待機電流為10 uA（6.0 V時），典型為4 uA\n\n組織為256 x 8位的2 kbits非易失性存儲器\n單電源，滿負載工作低至2.5 V\n片上電壓倍增器\n串行輸入/輸出I2C總線\n寫入操作： 字節(jié)寫入模式\n8字節(jié)頁面寫入模式（每個字節(jié)的總寫入時間最小化）\n\n讀取操作： 連續(xù)讀取\n隨機讀取\n\n用于寫入的內(nèi)部定時器（無外部組件）\n內(nèi)部上電復(fù)位\n0 kHz至100 kHz時鐘頻率\n通過使用冗余存儲代碼實現(xiàn)高可靠性\n承受：Tamb = 22Cel時為1,000,000個擦除/寫入(E/W)周期\n10年非易失性數(shù)據(jù)保留時間\n引腳和地址兼容：PCF8570、PCF8571、PCF8572、PCA8581和PCF85102\n引腳兼容（不同地址）PCF85103\nESD保護：按JESD22-A114超過2000 V HBM，按JESD22-A115超過150 V MM，按JESD22-C101超過1000 V CDM\n已按照JEDEC標準JESD78完成閉鎖測試，超過100 mA\n提供DIP8和SO8封裝。\n;

PCF8582C-2是一款浮動門控電可擦可編程只讀存儲器(EEPROM)，具備2 kbits（256 x 8位）非易失性存儲器。通過使用內(nèi)部冗余存儲代碼，對單個位元錯誤有容錯功能。相比傳統(tǒng)的EEPROM，此功能顯著提升了可靠性。由于使用全CMOS技術(shù)，所以功耗很低。使用電壓倍增器片上生成編程電壓。\n通過串行I2C總線接收和發(fā)送數(shù)據(jù)字節(jié)?？蓪⒆疃喟藗€PCF8582C-2器件連接至I2C總線。通過三個地址輸入（A0、A1和A2）完成芯片選擇。\n內(nèi)部執(zhí)行E/W周期的定時，所以無需外部組件。引腳7編程時間控制(PTC)必須連接至VDD或保持開路。也可以使用外部時鐘對E/W周期的長度進行定時。\n

恩XP

PCF8582C-2T

256 to 1024×8-bit CMOS EEPROMs with I2C-bus interface; ? Low power CMOS:\n– maximum operating current:\n? 2.0 mA (PCF8582C-2)\n? 2.5 mA (PCF8594C-2)\n? 4.0 mA (PCF8598C-2)\n– maximum standby current 10μA (at 6.0 V), typical 4μA\n? Non-volatile storage of:\n– 2 kbits organized as 256×8-bit (PCF8582C-2)\n– 4 kbits organized as 512×8-bit (PCF8594C-2)\n– 8 kbits organized as 1024×8-bit (PCF8598C-2)\n? Single supply with full operation down to 2.5 V\n? On-chip voltage multiplier\n? Serial input/output I2C-bus\n? Write operations:\n– byte write mode\n– 8-byte page write mode(minimizes total write time per byte)\n? Read operations:\n– sequential read\n– random read\n? Internal timer for writing (no external components)\n? Power-on-reset\n? High reliability by using a redundant storage code\n? Endurance: 1000000 Erase/Write (E/W) cycles at Tamb=22°C\n? 10 years non-volatile data retention time\n? Pin and address compatible to: PCF8570, PCF8571, PCF8572 and PCF8581.;

GENERAL DESCRIPTION\nThe PCF85xxC-2 is a family of floating gate Electrically Erasable Programmable Read Only Memories\n(EEPROMs) with 2, 4 and 8 kbits (256, 512 and 1024×8-bit). By using an internal redundant storage code\nit is fault tolerant to single bit errors. This feature dramatically increases the reliability compared to conventional EEPROMs. Power consumption is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier.FEATURES\n? Low power CMOS:\n– maximum operating current:\n? 2.0 mA (PCF8582C-2)\n? 2.5 mA (PCF8594C-2)\n? 4.0 mA (PCF8598C-2)\n– maximum standby current 10μA (at 6.0 V), typical 4μA\n? Non-volatile storage of:\n– 2 kbits organized as 256×8-bit (PCF8582C-2)\n– 4 kbits organized as 512×8-bit (PCF8594C-2)\n– 8 kbits organized as 1024×8-bit (PCF8598C-2)\n? Single supply with full operation down to 2.5 V\n? On-chip voltage multiplier\n? Serial input/output I2C-bus\n? Write operations:\n– byte write mode\n– 8-byte page write mode(minimizes total write time per byte)\n? Read operations:\n– sequential read\n– random read\n? Internal timer for writing (no external components)\n? Power-on-reset\n? High reliability by using a redundant storage code\n? Endurance: 1000000 Erase/Write (E/W) cycles at Tamb=22°C\n? 10 years non-volatile data retention time\n? Pin and address compatible to: PCF8570, PCF8571, PCF8572 and PCF8581.

PCF8582C-2T

帶有I2C總線接口的256 x 8位CMOS EEPROM; 低功率CMOS： 2.0 mA最大工作電流\n最大待機電流為10 uA（6.0 V時），典型為4 uA\n\n組織為256 x 8位的2 kbits非易失性存儲器\n單電源，滿負載工作低至2.5 V\n片上電壓倍增器\n串行輸入/輸出I2C總線\n寫入操作： 字節(jié)寫入模式\n8字節(jié)頁面寫入模式（每個字節(jié)的總寫入時間最小化）\n\n讀取操作： 連續(xù)讀取\n隨機讀取\n\n用于寫入的內(nèi)部定時器（無外部組件）\n內(nèi)部上電復(fù)位\n0 kHz至100 kHz時鐘頻率\n通過使用冗余存儲代碼實現(xiàn)高可靠性\n承受：Tamb = 22Cel時為1,000,000個擦除/寫入(E/W)周期\n10年非易失性數(shù)據(jù)保留時間\n引腳和地址兼容：PCF8570、PCF8571、PCF8572、PCA8581和PCF85102\n引腳兼容（不同地址）PCF85103\nESD保護：按JESD22-A114超過2000 V HBM，按JESD22-A115超過150 V MM，按JESD22-C101超過1000 V CDM\n已按照JEDEC標準JESD78完成閉鎖測試，超過100 mA\n提供DIP8和SO8封裝。\n;

PCF8582C-2是一款浮動門控電可擦可編程只讀存儲器(EEPROM)，具備2 kbits（256 x 8位）非易失性存儲器。通過使用內(nèi)部冗余存儲代碼，對單個位元錯誤有容錯功能。相比傳統(tǒng)的EEPROM，此功能顯著提升了可靠性。由于使用全CMOS技術(shù)，所以功耗很低。使用電壓倍增器片上生成編程電壓。\n通過串行I2C總線接收和發(fā)送數(shù)據(jù)字節(jié)。可將最多八個PCF8582C-2器件連接至I2C總線。通過三個地址輸入（A0、A1和A2）完成芯片選擇。\n內(nèi)部執(zhí)行E/W周期的定時，所以無需外部組件。引腳7編程時間控制(PTC)必須連接至VDD或保持開路。也可以使用外部時鐘對E/W周期的長度進行定時。\n

恩XP

PCF8582C-2T

256 to 1024 ? 8-bit CMOS EEPROMs with I2C-bus interface

GENERALDESCRIPTION ThePCF85xxC-2isafamilyoffloatinggateElectricallyErasableProgrammableReadOnlyMemories(EEPROMs)with2,4and8kbits(256,512and1024×8-bit).Byusinganinternalredundantstoragecodeitisfaulttoleranttosinglebiterrors.Thisfeaturedramaticallyincreas

PHI

PCF8582C-2_04

256 x 8-bit CMOS EEPROM with I2C-bus interface

PHI

PCF8582C-2P

PCF85xxC-2 family 256 to 1024 ? 8-bit CMOS EEPROMs with I2C-bus interface

PCF8582C-2P

256 x 8-bit CMOS EEPROMS with I2C-bus interface

PHI