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PBSS306NX

100 V, 4.5 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS306PX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS306NX

Marking:5G;Package:SC-62;100 V, 4.5 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS306NX_15

NPN Transistors

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

PBSS306NX,115

Package:TO-243AA;包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 類別:分立半導體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS NPN 100V 4.5A SOT89

Nexperia USA Inc.

Nexperia USA Inc.

Nexperia USA Inc.

PBSS306NZ

100V,5.1ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS306NZ-Q

100V,5.1ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS306PZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS306PX

100V,3.7APNPlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS306PZ

100V,4.1APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS306NZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS306PZ

100V,4.1APNPlowVCEsat(BISS)transistor

Featuresandbenefits ?Lowcollector-emittersaturation voltageVCEsat ?Highcollectorcurrentcapability ICandICM ?Highcollectorcurrentgain(hFE)at highIC ?Highefficiencyduetolessheat generation ?SmallerPrinted-CircuitBoard(PCB) areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PBSS306PZ-Q

100V,4.1APNPlowVCEsattransistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS306NZ-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorc

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

詳細參數(shù)

  • 型號:

    PBSS306NX

  • 功能描述:

    兩極晶體管 - BJT TRANS BISS TAPE-7

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應商型號品牌批號封裝庫存備注價格
恩XP
24+
標準封裝
10353
全新原裝正品/價格優(yōu)惠/質(zhì)量保障
詢價
NEXPERIA/安世
25+
SOT-89
32000
NEXPERIA/安世全新特價PBSS306NX即刻詢購立享優(yōu)惠#長期有貨
詢價
恩XP
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
NEXPERIA/安世
21+
SOT-89
60000
絕對原裝正品現(xiàn)貨,假一罰十
詢價
恩XP
18+
NA
1000
詢價
NEXPERIA/安世
24+
SOT-89
503522
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
恩XP
2450+
SOT-89
6885
只做原裝正品假一賠十為客戶做到零風險!!
詢價
恩XP
18+
NA
1000
詢價
恩XP
17+
NA
6200
100%原裝正品現(xiàn)貨
詢價
Nexperia
24+
NA
3000
進口原裝正品優(yōu)勢供應
詢價
更多PBSS306NX供應商 更新時間2025-7-20 22:59:00