NVH040N65S3F

絲印：NVH040N65S3F；Package：TO-247G03；MOSFET ??Power, N-Channel, SUPERFET III, FRFET 650 V, 65 A, 40 m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper?junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon?resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

NVH040N65S3F

Single N-Channel Power MOSFET SUPERFET ? III, FRFET?, 650 V , 65 A, 40 mΩ, TO-247; ? Best in Class body diode\n? High System Reliability\n? Internal Rg\n? Ease of use for fast design-in\n? Lower RDS(on) / Same Packages\n? Low EMI\n? Lower FOM (RDS(ON) max X Qg typ & RDS (ON) max X EOSS\n? High Power Density\n? Internal Zener / 650V BVdss\n? Low switching noise\n;

SUPERFET III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability

NVHL040N65S3

MOSFET??Power,N-Channel,SUPERFETIII,Automotive,Easy-Drive

NVHL040N65S3F

MOSFET??Power,N-Channel,SUPERFETIII,FRFET650V,65A,40m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper?junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon?resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro

NVHL040N65S3HF

MOSFET-Power,N-Channel,SUPERFETIII,FRFET650V,65A,40m

Description SUPERFETIIIMOSFETisONSemiconductor’sbrand?newhigh voltagesuper?junction(SJ)MOSFETfamilythatisutilizingcharge balancetechnologyforoutstandinglowon-resistanceandlowergate chargeperformance.Thisadvancedtechnologyistailoredtominimize conductionloss,pro