NTPF450N80S3Z

MOSFET – Power, N-Channel, SUPERFET? III, 800 V, 11 A, 450 mΩ, TO-220F; ? 900 V @ TJ = 150 °C\n? Higher system reliability at low temperature operation\n? Ultra Low Gate Charge (Typ. Qg = 19.3 nC)\n? Lower switching loss\n? Low Stored Energy in Output Capacitance (Eoss = 2.2 μJ @ 400 V)\n? Lower switching loss\n? Optimized Capacitance\n? Lower peak Vds and lower Vgs oscillation\n? ESD Improved Capability with Zener Diode\n? Higher system reliability\n? Typ. RDS(on) = 380 mΩ\n? RoHS Compliant\n? 100% Avalanche Tested\n? Internal Gate Resistance: 4.0 Ω\n;

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantly\nimproves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial\npower supplies.

NTPF450N80S3Z

絲?。?strong>NTPF450N80S3Z；Package：TO-220F；MOSFET ??Power,N-Channel, SUPERFET III 800 V, 450 m, 11 A