零件型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications ?Withbuilt-inbiasresistors ?Simplifycircuitdesign ?Reduceaquantityofpartsandmanufacturingprocess ?ComplementarytoRN1310,RN1311 | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOM Recom International Power | RECOM | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOM Recom International Power | RECOM | ||
P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications | SANYOSanyo Semicon Device 三洋三洋電機株式會社 | SANYO | ||
P-Channel1.8-V(G-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
SinglechannelLEDconstantcurrentdrivecontrolchip | LINKAGELinkage Goston Electronics Co., LTD 鉦銘科電子深圳市鉦銘科電子有限公司 | LINKAGE | ||
P-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成電路大中集成電路股份有限公司 | SINOPWER | ||
P-Channel30V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgTested APPLICATIONS ?ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
P-ChannelEnhancementModeMOSFET | SINOPWERSinopower Semiconductor Inc 大中集成電路大中集成電路股份有限公司 | SINOPWER | ||
P-Channel60-V(D-S)MOSFET FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) ?SinktoLeadCreepageDistance=4.8mm ?P-Channel ?175°COperatingTemperature ?DynamicdV/dtRating ?LowThermalResistance ?Lead(Pb)-freeAvailable | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI |
詳細參數(shù)
- 型號:
NTE2311
- 制造商:
NTE Electronics
- 功能描述:
TRANSISTOR NPN SILICON 1000V IC=15A TO-218 CASE TF=0.13US HIGH VOLTAGE HIGH SPEE
- 功能描述:
BIPOLAR TRANSISTOR NPN 450V TO-218
- 功能描述:
BIPOLAR TRANSISTOR, NPN, 450V, TO-218
- 功能描述:
T-NPN-SI HIGH VLTG SW
- 功能描述:
BIPOLAR TRANSISTOR, NPN, 450V, TO-218; Transistor
- Polarity:
NPN; Collector Emitter Voltage
- V(br)ceo:
450V; Power Dissipation
- Pd:
150W; DC Collector
- Current:
15A; DC Current Gain
- hFE:
10; Operating Temperature
- Min:
-65C; No. of
- Pins:
3 ;RoHS
- Compliant:
Yes
- 功能描述:
Trans GP BJT NPN 450V 15A 3-Pin(3+Tab) TO-218
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
新 |
20 |
全新原裝 貨期兩周 |
詢價 | ||||
2022+ |
16 |
全新原裝 貨期兩周 |
詢價 | ||||
NTE ELECTRONICS INC |
2023+ |
SMD |
11270 |
安羅世紀電子只做原裝正品貨 |
詢價 | ||
24+ |
N/A |
70000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
NTE |
23+ |
-3 |
39265 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
NTE |
23+ |
65480 |
詢價 |
相關(guān)規(guī)格書
更多- STC-642-020
- STC68-3C3AK
- STC685K35
- STC9120C
- STC9960
- RGG.0B.302.CLM
- RGG.1B.303.CLM
- RGG.1B.306.CLM
- RGH1005-2B-P-111-D
- RGH1608-2C-P-101-B
- XC6124A243ER-G
- XC6124A246MG-G
- XC6124A250MG-G
- XC6124A333ER-G
- XC6124A334MR-G
- RGP10G
- RGP10G/23
- RGP10G/4
- RGP10G/73
- RGP10GE/23
- RGP10GE/4
- XC6501A151GR-G
- XC6501A181GR-G
- XC6501A251GR-G
- XC6501A281GR-G
- RGP15D
- RGP15D-E3/1
- RGP15D-E3/4
- RGP15D-E3/54
- RGP15DHE3/54
- RGP15G/1
- RGP02-14E-E3/23
- RGP02-14E-E3/4
- RGP02-14E-E3/53
- RGP02-14E-E3/73
- RGP02-14EHE3/54
- RGM0110-K
- RGM06DRMD-S273
- RGM06DRMD-S664
- RGM06DRMH-S288
- RGM06DRMN-S273
- PTX-BC1
- P-TXFKP01CAZM
- PTX-KIT1DH
- PTY00A-12-10S
相關(guān)庫存
更多- STC-642-036
- STC68-3C3RK
- STC6NF30V
- STC9127
- STCA1000100
- RGG.0B.303.CLM
- RGG.1B.305.CLM
- RGG.2B.306.CLM
- RGH1005-2B-P-332-B
- RGH1608-2C-P-102-B
- XC6124A243MG-G
- XC6124A248ER-G
- XC6124A327MR-G
- XC6124A333MR-G
- XC6124A337ER-G
- RGP10G/1
- RGP10G/3
- RGP10G/54
- RGP10GE/16
- RGP10GE/3
- XC6501A1517R-G
- XC6501A1817R-G
- XC6501A2517R-G
- XC6501A2817R-G
- XC6501A28A7R-G
- RGP15D/4
- RGP15D-E3/23
- RGP15D-E3/51
- RGP15D-E3/73
- RGP15DHE3/73
- RGP02-14E-E3/1
- RGP02-14E-E3/3
- RGP02-14E-E3/51
- RGP02-14E-E3/54
- RGP02-14EHE3/53
- RGM.0B.304.NLL
- RGM06DRMD
- RGM06DRMD-S288
- RGM06DRMH
- RGM06DRMN
- PTXB2MM6.000MHZ
- PTX-BC2
- PTX-KIT1
- PTX-KIT2
- PTY00A-16-26P