NTB190N65S3HF

功率 MOSFET，N 溝道，SUPERFET? III，F(xiàn)RFET?，650 V，20 A，190 mΩ，D2PAK; ? 700 V @ TJ = 150 °C\n? Higher system reliability at low temperature operation\n? Ultra Low Gate Charge (Typ. Qg = 35 nC)\n? Lower switching loss\n? Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF)\n? Lower switching loss\n? Excellent body diode performance (low Qrr, robust body diode)\n? Higher system reliability in LLC and Phase shift full bridge circuit\n? Optimized Capacitance\n? Lower peak Vds and lower Vgs oscillation\n? RoHS Compliant\n? 100% Avalanche Tested\n? Typ. RDS(on) = 161 mΩ\n;

SUPERFET III MOSFET is ON Semiconductor’s brand?new high\nvoltage super?junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on?resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provide superior switching performance, and\nwithstand extreme dv/dt rate.\nConsequently, SUPERFET III MOSFET is very suitable for the\nvarious power systems for miniaturization and higher efficiency.\nSUPERFET III FRFET MOSFET’s optimized reverse recovery\nperformance of body diode can remove additional component and\nimprove system reliability.

NTB190N65S3HF

絲?。?strong>NTB190N65S3HF；Package：D2PAK；MOSFET ??N??hannel, SUPERFET III, FRFET 650 V, 20 A, 190 m

NTHL190N65S3HF

MOSFET??Power,N-Channel,SUPERFETIII,FRFET650V,20A,190m

NTMT190N65S3H

MOSFET-Power,N??hannel,SUPERFETIII,FAST650V,190m,16A

NTMT190N65S3HF

MOSFET-Power,N-Channel,SUPERFETIII,FRFET