NPTB00004

Gallium Nitride 28V, 5W RF Power Transistor

NPTB00004

Low cost, surface mount SOIC package

NPTB00004A

GaN Amplifier 28 V, 5 W, DC - 6 GHz; ·Broadband Operation from DC-6 GHz\n·Drop in Replacement for NPTB00004\n·High Drain Efficiency (>55%)\n·Industry Standard Plastic Package\n·28V Operation\n;

The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 5W (37 dBm) in an industry standard surface mount SOIC plastic package. At frequencies below 3GHz, the NPTB00004A is a drop in replacement for the NPTB00004. For load-pull data and non-linear models, please send an e-mail to applications@macom.com.

NPTB00004B

GaN Power Transistor, 28 V, 5 W DC - 6 GHz; ·57 % Drain Efficiency @ 2.5 GHz\n·GaN on Si HEMT D-Mode Transistor\n·Tunable from DC - 6 GHz\n·Industry standard SOIC plastic package\n·28V Operation\n·RoHS* Compliant\n·100 % RF Tested\n·14.8 dB Gain @ 2.5 GHz\n·28 V Operation\n·Suitable for linear and saturated applications\n;

The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package.

NPTB00004_15

5W RF Power Transistor

NPTB00004A

Gallium Nitride 28V, 5W, DC-6 GHz HEMT

NPTB00004A

Next generation high power RF semiconductor technology

NPTB00004A_15

DC-6 GHz HEMT

NPTB00004D

Next generation high power RF semiconductor technology

NPTB00004D

Gallium Nitride 28V, 5W RF Power Transistor; ·Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE, and Other Applications from DC to 6GHz\n·RoHS Compliant\n·High Reliability Gold Metallization Process\n·Low Cost, Surface Mount SOIC Package\n·15.5dB Power Gain\n·5W P3dB CW Power\n·100% RF Tested at 2500MHz\n·Subject to EAR99 Export Control\n·Lead-Free\n;