NPA1008

GaN Amplifier 28 V, 5 W, 0.020 - 2.7 GHz; ·GaN on Si HEMT D-Mode Integrated Amplifier\n·100% RF Tested\n·45% Drain Efficiency\n·28 V Operation\n·50 O Input Matched\n·Wideband tuned from 20 - 2700 MHz\n·Suitable for linear and saturated applications\n·Halogen-Free “Green” Mold Compound\n·Lead-Free 4 x 4 mm 24-lead PQFN Package\n·RoHS* Compliant and 260°C Reflow Compatible\n;

The NPA1008 is a wideband integrated GaN power amplifier optimized for 20 - 2700 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 x 4 mm 24-lead QFN plastic package. The NPA1008 is ideally suited for general purpose narrowband to broadband applications in test and measurement, defense communications, land mobile radio and wireless infrastructure.

NPA1008

GaN on Si HEMT D-Mode Integrated Amplifier

NPA1008

Next generation high power RF semiconductor technology

NPA1008A

GaN Amplifier 28 V, 5 W, 20 - 2700 MHz; ·GaN on Si HEMT D-Mode Integrated Amplifier\n·100% RF Tested\n·45% Drain Efficiency\n·28 V Operation\n·50 Ω Input Matched\n·Broadband Operation from 20 - 2700 MHz\n·Suitable for linear and saturated applications\n·Lead-Free 4 x 4 mm 24-lead PQFN Package\n·RoHS* Compliant\n;

The NPA1008A is an integrated GaN on silicon power amplifier optimized for 20 - 2700 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 mm 24-lead QFN plastic package. The NPA1008A is ideally suited for general purpose narrowband to broadband applications.

NPA1008-SMB

GaN on Si HEMT D-Mode Integrated Amplifier

NPA1008-SMBPPR

包裝：盒 類別：開發(fā)板，套件，編程器 射頻評(píng)估和開發(fā)套件，開發(fā)板 描述：EVAL BOARD FOR NPA1008

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