NP80N06MLG中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The NP80N06MLG, NP80N06NLG, and NP80N06PLG are N-channel MOS Field Effect Transistors designed for high current switching applications.

FEATURES

? Logic level

? Built-in gate protection diode

? Super low on-state resistance

- NP80N06MLG, NP80N06NLG

RDS(on)1 = 8.6 mΩ MAX. (VGS = 10 V, ID = 40 A)

RDS(on)2 = 13.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

- NP80N06PLG

RDS(on)1 = 8.3 mΩ MAX. (VGS = 10 V, ID = 40 A)

RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

? High current rating

ID(DC) = ±80 A

? Low input capacitance

Ciss = 4600 pF TYP.

? Designed for automotive application and AEC-Q101 qualified