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NAND512R3A2BZA6集成電路(IC)的存儲器規(guī)格書PDF中文資料

NAND512R3A2BZA6
廠商型號

NAND512R3A2BZA6

參數(shù)屬性

NAND512R3A2BZA6 封裝/外殼為63-VFBGA;包裝為托盤;類別為集成電路(IC)的存儲器;產(chǎn)品描述:IC FLSH 512MBIT PARALLEL 63VFBGA

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
IC FLSH 512MBIT PARALLEL 63VFBGA

封裝外殼

63-VFBGA

文件大小

916.59 Kbytes

頁面數(shù)量

57

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

原廠下載下載地址一下載地址二到原廠下載

更新時間

2025-6-27 19:00:00

人工找貨

NAND512R3A2BZA6價格和庫存,歡迎聯(lián)系客服免費人工找貨

NAND512R3A2BZA6規(guī)格書詳情

NAND512R3A2BZA6屬于集成電路(IC)的存儲器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的NAND512R3A2BZA6存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12μs (max)

– Sequential access: 50ns (min)

– Page program time: 200μs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

產(chǎn)品屬性

更多
  • 產(chǎn)品編號:

    NAND512R3A2BZA6E

  • 制造商:

    STMicroelectronics

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    非易失

  • 存儲器格式:

    閃存

  • 技術(shù):

    閃存 - NAND

  • 存儲容量:

    512Mb(64M x 8)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    60ns

  • 電壓 - 供電:

    1.7V ~ 1.95V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    63-VFBGA

  • 供應(yīng)商器件封裝:

    63-VFBGA(8.5x15)

  • 描述:

    IC FLSH 512MBIT PARALLEL 63VFBGA

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
ST
24+
BGA
20000
全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅!!
詢價
STM
0722+
BGA
231
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
ST/意法
BGA
125000
一級代理原裝正品,價格優(yōu)勢,長期供應(yīng)!
詢價
STM
2016+
BGA
6523
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
詢價
STMicroelectronics
25+
63-VFBGA
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
STMicroelectronics
21+
60-FBGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
詢價
STM
2016+
BGA
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
Numonyx/STMi
23+
63-VFBGA
65480
詢價
STM
22+
BGA
22108
原裝正品現(xiàn)貨
詢價
WINBOND
23+
BGA
9960
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價